![]() ![]() This factor value is 80 that means the collector current (CC) will be changed by eighty times as compared to the base current. So, this amplification mainly depends on the hfe (amplification factor). Generally in a transistor, when the current supplies throughout the base terminal can be amplified within the current supplying throughout the collector terminal. The output signal’s amplification can be affected by changing the ‘RL’ value. Here, the ‘R1’ resistor is the load resistor whereas the ‘R2’ resistor is the emitter resistor. ![]() ![]() In the following application circuit, both the resistors like R3 & R4 are used to form a potential divider to decide the VBE (Emitter -Base voltage). Here the magnitude of the input sine wave is amplified from 8mV to 50mV. Here, the voltage supply at the base terminal should be positive as compared to the flow of current from the emitter (E) to collector (C). When the 2N5551 transistor is biased, then the current in the emitter terminal is equivalent to the sum of the remaining two terminals like base & collector. The temperature range must be > -55 centigrade & < +150 centigrade. Always utilize an appropriate base resistor for providing the necessary base current, do not control load over 600mA. Need to maintain 5V – 10V under from maximum ratings to be secure. To obtain better performance from this 2N5551 transistor & also to run for a long time in an electronic circuit, it is advised not to use the voltage above 160V. Dissipation of collector terminal (Max) is 625 mW.Voltage from the emitter to the base is VBE = 6V.Voltage from collector to the base is VCB = 180V. ![]() Voltage from collector to emitter is VCE = 160 V.Nonstop collector current or IC is 600mA.DC gain is high like 80 whenever IC=10mA.Handing capacity of power & current is high.The process technology used in this is advanced. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |